Sharma Pamarthy
9Patents
5h-index
27Co-inventors
59Inventor score
Filing activity: Sep 11, 2000 → May 21, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8475625B2 | Apparatus for etching high aspect ratio features | Electricity | 14 | Active |
| US6979652B2 | Etching multi-shaped openings in silicon | Electricity | 13 | Expired |
| US6593244B1 | Process for etching conductors at high etch rates | Electricity | 9 | Expired |
| US8753474B2 | Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactor | Electricity | 7 | Active |
| US8158522B2 | Method of forming a deep trench in a substrate | Electricity | 5 | Active |
| US6897155B2 | Method for etching high-aspect-ratio features | Electricity | 3 | Expired |
| US6905616B2 | Method of releasing devices from a substrate | Performing Operations; Transporting | 2 | Expired |
| US9070633B2 | Method and apparatus for high efficiency gas dissociation in inductive coupled plasma reactor | Electricity | 1 | Active |
| US9039908B2 | Post etch reactive plasma milling to smooth through substrate via sidewalls and other deeply etched features | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.