Method for clamping a semiconductor device in a manufacturing process

US6593254B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Manfred Kraxenberger · Radeberg, DE
• Ines Thümmel · Dresden, DE
• Bruno Spuler · Wappingers Falls, US
• Thorsten Schedel · Dresden, DE
• Karl Mautz · Round Rock, US

Key dates

• Filing date: Mar 28, 2002
• Grant date: Jul 15, 2003
• Expiry date: Mar 28, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/928
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

There is disclosed a method for clamping a semiconductor wafer, preferably suitable for a wafer with a diameter of 300 mm or larger. After depositing at least one encapsulating material layer over the front side and backside of the wafer, the material layer over the front side of the wafer is etched selectively to form a predetermined structure in following process steps. Wafer warpage is caused as a result of unequal wafer bowing stress of the material layer. By removing the material layer over the backside of the wafer partially or completely in accordance with the desired reduction of the bowing stress wafer warpage is reduced. In a further course of the manufacturing process, the semiconductor device is clamped electrostatically, physically or by use of vacuum.