Magneto resistive storage device having double tunnel junction
US6593608B1 · kind B1 · utility
30Cited by
13References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2002 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Mar 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3263
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device is disclosed that includes first and second soft reference layers, first and second barrier layers, and a sense layer, bound between the first and second barrier layers, which are further bound by the first and second soft reference layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.