Process integration of electrical thickness measurement of gate oxide and tunnel oxides by corona discharge technique
US6593748B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Jul 12, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a system for controlling a thin film formation process using a corona discharge measurement technique. The system includes a thin film formation system operative to form a thin film based on one or more process parameters, a corona discharge measurement system operable to measure one or more properties of the thin film, and a processor operatively coupled to the thin film formation system and the corona discharge measurement system, wherein the processor analyzes the data from the corona discharge measurement system and a set of target data and controls the one or more process parameters via the thin film formation system based on the analysis. The present invention also relates to a method for controlling a thin film formation using a corona discharge technique. The method includes forming a thin film based on one or more thin film formation process parameters, measuring the thin film via a corona discharge technique, analyzing the results of the corona discharge measurement, and controlling the one or more thin film formation process parameters based on the analysis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.