Inventor · Cupertino, CA, US

Arvind Halliyal

82Patents
28h-index
67Co-inventors
91Inventor score

Filing activity: May 13, 1992 → Oct 26, 2011

Most-cited inventions

PatentTitleAreaCited byStatus
US6674138B1 Use of high-k dielectric materials in modified ONO structure for semiconductor devices Electricity 256 Expired
US6642573B1 Use of high-K dielectric material in modified ONO structure for semiconductor devices Emerging Cross-Sectional Technologies 174 Expired
US6586349B1 Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices Electricity 164 Expired
US6451641B1 Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material Electricity 110 Expired
US6803272B1 Use of high-K dielectric material in modified ONO structure for semiconductor devices Electricity 108 Expired
US7115469B1 Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) process Electricity 95 Expired
US6740605B1 Process for reducing hydrogen contamination in dielectric materials in memory devices Electricity 83 Expired
US6750066B1 Precision high-K intergate dielectric layer Electricity 83 Expired
US6645882B1 Preparation of composite high-K/standard-K dielectrics for semiconductor devices Electricity 82 Expired
US6949433B1 Method of formation of semiconductor resistant to hot carrier injection stress Emerging Cross-Sectional Technologies 81 Expired
US6670241B1 Semiconductor memory with deuterated materials Electricity 66 Expired
US6642066B1 Integrated process for depositing layer of high-K dielectric with in-situ control of K value and thickness of high-K dielectric layer Electricity 64 Expired
US6265268A High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device Electricity 63 Expired
US6406960B1 Process for fabricating an ONO structure having a silicon-rich silicon nitride layer Emerging Cross-Sectional Technologies 60 Expired
US6563183B1 Gate array with multiple dielectric properties and method for forming same Electricity 57 Expired
US7033957B1 ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices Emerging Cross-Sectional Technologies 42 Expired
US6958511B1 Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen Electricity 42 Expired
US6593748B1 Process integration of electrical thickness measurement of gate oxide and tunnel oxides by corona discharge technique Chemistry; Metallurgy 40 Expired
US6248628A Method of fabricating an ONO dielectric by nitridation for MNOS memory cells Electricity 40 Expired
US6617215B1 Memory wordline hard mask Electricity 39 Expired
US6752899B1 Acoustic microbalance for in-situ deposition process monitoring and control Chemistry; Metallurgy 38 Expired
US6319775A Nitridation process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device Electricity 37 Expired
US6410388B1 Process for optimizing pocket implant profile by RTA implant annealing for a non-volatile semiconductor device Electricity 36 Expired
US6653191B1 Memory manufacturing process using bitline rapid thermal anneal Electricity 35 Expired
US6949481B1 Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device Electricity 33 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.