Relaxed InxGa1-xAs layers integrated with Si
US6594293B1 · kind B1 · utility
21Cited by
18References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2001 |
| Grant date | Jul 15, 2003 |
| Priority date | — |
| Expiry date | Feb 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02546
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of processing semiconductor materials and a corresponding semiconductor structure, including providing a virtual substrate of a GaAs epitaxial film on a Si substrate, and epitaxailly growing a relaxed graded layer of InxGal-xAs at a temperature ranging upwards from about 600° C. with a subsequent process for planarization of the InGaAs alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.