Stopped leadless differential sensor
US6595066B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2002 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Apr 5, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L19/0618
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A leadless sensor of the type employing a p+ rim which surrounds contact areas, each contact area defined by a metallized portion surrounded by a p+ semiconductor material, which p+ semiconductor materials or fingers are coupled to an active sensor array. The leadless sensor is bonded to a first glass cover member having two slotted apertures which communicate with the active regions of the sensor area on the underside and a top glass contact member which has two slotted regions which communicate with the piezoresistive sensors on the top side of the semiconductor wafer. The glass contact member has a series of corner through holes which are congruent with the contact terminals associated with the semiconductor sensor and which through holes are filled with a glass metal frit to enable contact to be made to the contact terminals of the semiconductor sensor. The contact glass member and cover member are electrostatically bonded to the silicon sensor at both sides of the sensor and have stop structures on both members to enable the sensor to receive a force or pressure in either direction. If the force in either direction exceeds a predetermined force, the silicon sensor will impinge…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.