Chemically preventing Cu dendrite formation and growth by immersion
US6596637B1 · kind B1 · utility
10Cited by
8References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1998 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Dec 7, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by immersing the wafer in a bath containing a chemical agent. Embodiments include removing up to 60 å of silicon oxide by immersing the wafer in an acidic solution, such as a solution of hydrofluoric acid and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.