Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD

US6596653B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Zhengquan Tan · Cupertino, US
• Dongqing Li · Beijing, CN
• Walter Zygmunt · San Jose, US
• Tetsuya Ishikawa · Fuji, JP

Key dates

• Filing date: May 11, 2001
• Grant date: Jul 22, 2003
• Expiry date: May 14, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The silicon oxide layer is formed by flowing a process gas including a silicon-containing source, an oxygen-containing source, an inert gas and a hydrogen-containing source into the substrate processing chamber and forming a high density plasma (i.e., a plasma having an ion density of at least 1×1011 ions/cm3) from the process gas to deposit said silicon oxide layer over said substrate. In one embodiment, the hydrogen-containing source in the process gas is selected from the group of H2, H2O, NH3, CH4 and C2H6.