Inventor · Fuji, JP

Tetsuya Ishikawa

252Patents
38h-index
328Co-inventors
93Inventor score

Filing activity: Sep 12, 1991 → Mar 2, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6303523A Plasma processes for depositing low dielectric constant films Emerging Cross-Sectional Technologies 649 Expired
US6596653B2 Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD Electricity 498 Expired
US6447651B1 High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers Chemistry; Metallurgy 471 Expired
US6660662B2 Method of reducing plasma charge damage for plasma processes Chemistry; Metallurgy 456 Expired
US6929700B2 Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD Electricity 456 Expired
US7036453B2 Apparatus for reducing plasma charge damage for plasma processes Chemistry; Metallurgy 449 Expired
US6170428A Symmetric tunable inductively coupled HDP-CVD reactor Electricity 322 Expired
US6182602A Inductively coupled HDP-CVD reactor Electricity 304 Expired
US5944902A Plasma source for HDP-CVD chamber Electricity 293 Expired
US6083344A Multi-zone RF inductively coupled source configuration Electricity 287 Expired
US6189483A Process kit Emerging Cross-Sectional Technologies 287 Expired
US5556501A Silicon scavenger in an inductively coupled RF plasma reactor Electricity 246 Expired
US5350479A Electrostatic chuck for high power plasma processing Emerging Cross-Sectional Technologies 149 Expired
US5761023A Substrate support with pressure zones having reduced contact area and temperature feedback Electricity 122 Expired
US6518195B1 Plasma reactor using inductive RF coupling, and processes Electricity 113 Expired
US5772771A Deposition chamber for improved deposition thickness uniformity Electricity 101 Expired
US6488807B1 Magnetic confinement in a plasma reactor having an RF bias electrode Electricity 99 Expired
US6068784A Process used in an RF coupled plasma reactor Electricity 96 Expired
US6348725B1 Plasma processes for depositing low dielectric constant films Emerging Cross-Sectional Technologies 94 Expired
US6660656B2 Plasma processes for depositing low dielectric constant films Emerging Cross-Sectional Technologies 91 Expired
US6486081B1 Gas distribution system for a CVD processing chamber Electricity 88 Expired
US5824607A Plasma confinement for an inductively coupled plasma reactor Electricity 84 Expired
US6853141B2 Capacitively coupled plasma reactor with magnetic plasma control Electricity 84 Expired
US6251792A Plasma etch processes Electricity 82 Expired
US6143078A Gas distribution system for a CVD processing chamber Electricity 79 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.