Gap fill for high aspect ratio structures

US6596654B1 · kind B1 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Atiye Bayman · Palo Alto, US
• Md Sazzadur Rahman · Sherwood, US
• Weijie Zhang · New Taipei, TW
• Bart J. van Schravendijk · Sunnyvale, US
• Vishal Gauri · San Jose, US
• George D. Papasoulitotis · Cupertino, US
• Vikram Singh · North Andover, US

Key dates

• Filing date: Nov 28, 2001
• Grant date: Jul 22, 2003
• Expiry date: Nov 28, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.