Method of contacting a silicide-based schottky diode and diode so formed
US6597050B1 · kind B1 · utility
8Cited by
21References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 2000 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | May 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A method of contacting a silicide-based Schottky diode including the step of providing a contact to the silicide that is fully bordered with respect to an internal edge of the guard ring area. A Schottky diode having silicide contacting a guard ring of the Schottky diode and a contact to the silicide that is fully bordered by silicide with respect to an internal edge of the guard ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.