Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration
US6597067B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 1997 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Apr 17, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnection wiring structure in an integrated circuit chip designed to eliminate electromigration. The structure includes segments of aluminum interspersed with segments of refractory metal, wherein each aluminum segment is followed by a segment of refractory metal. The aluminum and refractory metal segments are aligned with respect to each other to ensure electrical continuity and to force the electrical current to sequentially cross the aluminum and the refractory metal segments. The above structure can be advantageously enhanced by adding an underlayer, an overlayer or both, all of which are made of refractory metal. The interconnection wire structure described above can be expanded to include vias or studs linking interconnection lines placed at different levels of the IC chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.