Resistive cross point memory arrays having a charge injection differential sense amplifier
US6597598B1 · kind B1 · utility
55Cited by
8References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2002 |
| Grant date | Jul 22, 2003 |
| Priority date | — |
| Expiry date | Apr 30, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/78
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data storage device that includes a resistive cross point array of memory cells, a plurality of word lines, and a plurality of bit lines, and a sense amplifier that utilizes an injection charge amplifier is disclosed. The memory cells are arranged into multiple groups of one or more memory cells. The injection charge amplifier determines whether a sensed memory cell is in a first or second resistive state as compared to a reference cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.