Defect detection using liquid crystal and internal heat source
US6599762B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 8, 2000 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Mar 8, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/1731
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Defect analysis of an integrated circuit die having an internal heat source is enhanced using a method and system that use the internal heat source to heat the die. According to an example embodiment of the present invention, a semiconductor die having a liquid crystal layer is analyzed by detecting a liquid crystal phase change caused by electrical operation of the die. A first circuit region is electrically operated and used as the primary heat source to generate sufficient heat at a second circuit region to effect a separately viewable phase change in an area of the liquid crystal layer corresponding to the second circuit region. The internal heat source is adapted to cause the liquid crystal phase change without necessarily heating the die with an external heat source. A detector is adapted and used to detect the liquid crystal phase change in the area corresponding to the second circuit region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.