Method for fabricating semiconductor device
US6599803B2 · kind B2 · utility
18Cited by
19References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 16, 2002 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Aug 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device suitable for embodying an isotropic etching profile in etching a silicon substrate when a single drain cell is formed, including the steps of: a) forming a gate electrode on a silicon substrate; b) forming a spacer contacting both sides of the gate electrode; c) growing a silicon germanium layer on the silicon substrate exposed at the bottom of the spacer; d) exposing a source/drain formation region by selectively removing the silicon germanium layer; and e) growing an epitaxial silicon layer doped on the opened source/drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.