Fabrication of field-effect transistor for alleviating short-channel effects
US6599804B2 · kind B2 · utility
28Cited by
19References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2001 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Sep 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Short-channel threshold voltage roll-off and punchthrough in an IGFET (40 or 42) having a channel zone (64 or 84) situated in body material (50) are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 &mgr;m deep into the body material but not more than 0.4 &mgr;m deep into the body material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.