Fu-Cheng Wang
19Patents
9h-index
22Co-inventors
72Inventor score
Filing activity: Dec 14, 1998 → May 23, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6548842B1 | Field-effect transistor for alleviating short-channel effects | Electricity | 175 | Expired |
| US6566204B1 | Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors | Electricity | 78 | Expired |
| US6461932B1 | Semiconductor trench isolation process that utilizes smoothening layer | Electricity | 46 | Expired |
| US7145191B1 | P-channel field-effect transistor with reduced junction capacitance | Electricity | 31 | Expired |
| US6599804B2 | Fabrication of field-effect transistor for alleviating short-channel effects | Electricity | 28 | Expired |
| US6797576B1 | Fabrication of p-channel field-effect transistor for reducing junction capacitance | Electricity | 17 | Expired |
| US7701005B1 | Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristics | Electricity | 17 | Active |
| US7879669B1 | Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel length | Electricity | 14 | Active |
| US7595244B1 | Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristics | Electricity | 10 | Active |
| US7785971B1 | Fabrication of complementary field-effect transistors with vertical body-material dopant profiles tailored to alleviate punchthrough and reduce current leakage | Electricity | 3 | Active |
| US8120531B2 | Signal processing apparatus for multi-mode satellite positioning system and method thereof | Physics | 3 | Active |
| US7944265B2 | Clock generator, method for generating clock signal and fractional phase lock loop thereof | Electricity | 2 | Active |
| US8129262B1 | Fabrication of field-effect transistor with vertical body-material dopant profile tailored to alleviate punchthrough and reduce current leakage | Electricity | 2 | Active |
| US7700980B1 | Structure and fabrication of field-effect transistor for alleviating short-channel effects | Electricity | 1 | Active |
| US8849221B2 | Direct conversion transmitter and communication system utilizing the same | Electricity | 0 | Active |
| US8188683B2 | Poly-chromatic light-emitting diode (LED) lighting system | Electricity | 0 | Active |
| US11744762B2 | Gait activity learning assistance system and the application method thereof | Human Necessities | 0 | Active |
| US10381670B2 | Hydrogen production system | Emerging Cross-Sectional Technologies | 0 | Active |
| US8411344B2 | Electrical control light valve apparatus having liquid metal | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.