Integrated circuit capacitor and memory
US6600183B1 · kind B1 · utility
18Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1998 |
| Grant date | Jul 29, 2003 |
| Priority date | — |
| Expiry date | Feb 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrode structure for a capacitor. The electrode structure includes a contact plug comprising an oxidation barrier 208 and a bottom electrode comprising a conductive adhesion-promoting portion 210 and an oxidation-resistant portion 204, the adhesion-promoting portion contacting the oxidation barrier of the contact plug. In further embodiments, the oxidation barrier and adhesion-promoting portion comprise Ti—Al—N.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.