Silylation process for forming contacts
US6602794B1 · kind B1 · utility
10Cited by
7References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 9, 2001 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Mar 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming narrow trenches in a layer of photoresist is disclosed. The method includes providing a photoresist layer and patterning the photoresist layer to form a plurality of apertures having sidewalls. The method can also include silylating the sidewalls of the apertures in the photoresist layer and reflowing the photoresist layer. The process can be utilized to form contacts having widths which are less than one lithographic feature wide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.