Fast recovery diode and method for its manufacture
US6603153B2 · kind B2 · utility
9Cited by
18References
4Claims
0Family size
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Key dates
| Filing date | May 21, 2001 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | May 21, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/91
Abstract
A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer and is also annealed. The diode then has very soft recovery characteristics without requiring heavy metal doping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.