Three-layered stacked magnetic spin polarization device with memory
US6603677B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2001 |
| Grant date | Aug 5, 2003 |
| Priority date | — |
| Expiry date | Nov 20, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24942
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic device including at least a memory cell having a first magnetic layer with a fixed magnetization direction. The first magnetic layer spin polarizes a writing current of electrons. The memory cell includes a second magnetic layer having a three-layered stack with a variable magnetization direction. An insulating or semi-conduction layer is formed between the first and second magnetic layers. The variable magnetization direction is oriented by spins of a spin polarized writing current. The three-layered stack includes two magnetic layers separated by a non-magnetic conducting layer. The first magnetic layer aligns the variable magnetization direction with the fixed magnetization direction by directing an incident writing current of electrons perpendicular through the first magnetic layer and then perpendicular through the second magnetic layer. The first magnetic layer opposes the variable magnetization direction with the fixed magnetization direction by directing another incident writing current of electrons perpendicular through the second magnetic layer and then perpendicular through the first magnetic layer to.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.