Planar finFET patterning using amorphous carbon

US6605514B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Cyrus E. Tabery · Sunnyvale, US
• Scott A. Bell · San Jose, US
• Srikanteswara Dakshina-Murthy · Wappingers Falls, US

Key dates

• Filing date: Sep 9, 2002
• Grant date: Aug 12, 2003
• Expiry date: Sep 9, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/673

Abstract

An exemplary embodiment relates to a method of finFET patterning. The method can include patterning a fin structure above a substrate, forming amorphous carbon spacers along lateral sidewalls of the fin structure, depositing an oxide layer and polishing the oxide layer to expose top portions of the fin structure and the amorphous carbon spacers, removing amorphous carbon spacers, and depositing polysilicon where the amorphous carbon spacers were located.