Fully depleted SOI device with tungsten damascene contacts and method of forming same
US6605843B1 · kind B1 · utility
20Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2000 |
| Grant date | Aug 12, 2003 |
| Priority date | — |
| Expiry date | Sep 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
A fully depleted field effect transistor formed in a silicon on insulator (SOI) substrate includes a body region formed in a silicon device layer over an isolation layer of the SOI substrate. A gate is positioned above the body region and includes a base gate region adjacent the body region and a wide top gate region formed of tungsten damascene and spaced apart from the body region. An inverted T-shaped central channel region is formed between adjacent source regions and drain region in the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.