Method for producing a light-emitting semiconductor device
US6607595B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 2, 2000 |
| Grant date | Aug 19, 2003 |
| Priority date | — |
| Expiry date | Oct 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
Abstract
Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlXGa1-xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1-XN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1-xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1-xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.