Combination thin-film stress and thickness measurement device
US6608689B1 · kind B1 · utility
11Cited by
10References
13Claims
0Family size
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Key dates
| Filing date | Aug 27, 1999 |
| Grant date | Aug 19, 2003 |
| Priority date | — |
| Expiry date | Aug 27, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/16
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A composite metrology tool, measures basic optical parameters of thin films (e.g., thickness, index of refraction, and birefringence) and stress (e.g., wafer displacements, such as bow and warp). These measurements are combined (e.g. in a processor) using optimization techniques to yield accurate overall information of the wafer parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.