Oxidizing polishing slurries for low dielectric constant materials
US6610114B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2001 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Jun 14, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/888
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.