Contact for memory cells
US6611449B1 · kind B1 · utility
7Cited by
6References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 24, 2002 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Sep 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell which provides a diffusion path for hydrogen to the transistor is disclosed. The diffusion path is provided by forming a contact in which the upper section overlaps the lower section, thus creating a gap that serve as a hydrogen diffusion path. The hydrogen diffusion path is necessary for annealing the damage to the gate oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.