Self-aligned cross-point MRAM device with aluminum metallization layers
US6611453B2 · kind B2 · utility
81Cited by
3References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 1, 2001 |
| Grant date | Aug 26, 2003 |
| Priority date | — |
| Expiry date | Aug 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An MRAM device (160) and manufacturing process thereof having aluminum conductive lines (134) and (152), with self-aligning cross-points. Conductive lines (134) and metal stack (138) are patterned in a single patterning step and etched. Conductive lines (152) positioned orthogonally to conductive lines (134) are patterned simultaneously with the patterning of metal stack (138) and are etched. The metal stack (138) serves as an anti-reflective coating for conductive lines (152) during the etching process. A multi-level MRAM device may be manufactured in accordance with an embodiment of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.