Method for making small pore for use in programmable resistance memory element
US6613604B2 · kind B2 · utility
423Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2001 |
| Grant date | Sep 2, 2003 |
| Priority date | — |
| Expiry date | Sep 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A method for making a small pore. The defined pore is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.