Methods for wafer proximity cleaning and drying
US6616772B2 · kind B2 · utility
60Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2002 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Dec 3, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preparing a semiconductor wafer surface is provided which includes providing a plurality of source inlets and a plurality of source outlets and applying isopropyl alcohol (IPA) vapor gas through the plurality of source inlets to the wafer surface when the plurality of source inlets and outlets are in close proximity to the wafer surface. The method also includes applying a fluid through the plurality of source inlets to the wafer surface while applying the IPA vapor gas, and removing the applied IPA vapor gas and fluid from the wafer surface through the plurality of source outlets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.