Evaluating method of hydrophobic process, forming method of resist pattern, and forming system of resist pattern
US6617095B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2001 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Jun 9, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2995
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A HMDS gas is supplied to a surface of a wafer W to perform a hydrophobic process, thereafter the wafer W is contained in an airtight container on a cassette stage, and is transferred to an analyzer provided at an external portion of a resist pattern forming apparatus. The analyzer performs mass spectrometry of the quantity of an ionic species such as CH9Si+, C3H9Si+, C3H9Osi− and the like on the surface of the wafer W using an analyzing section, for example, TOF-SIMS, whereby measuring a HMDS quantity (hexamethyldisilazane) on the surface of the wafer W. This method makes it possible to measure the HMDS quantity on the surface of the wafer W and to evaluate a hydrophobic process state with high reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.