Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition
US6617173B1 · kind B1 · utility
46Cited by
54References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 10, 2001 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Nov 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique to form an ultrathin dielectric layer over a ferromagnetic layer by atomic layer deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.