Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base

US6617220B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• James S. Dunn · Jericho, US
• David L. Harame · South Burlington, US
• Jeffrey B. Johnson · Hague, US
• Robb Johnson · Thousand Oaks, US
• Louis D. Lanzerotti · Burlington, US
• Stephen A. St. Onge · Colchester, US

Key dates

• Filing date: Mar 16, 2001
• Grant date: Sep 9, 2003
• Expiry date: Mar 16, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/177

Abstract

An epitaxial base bipolar transistor including an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on a portion of the single crystal layer; a raised extrinsic base on a surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrinsic base, wherein the insulator is a spacer; and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in the single crystal layer, wherein the emitter diffusion has an emitter diffusion junction depth.