Robb Johnson
12Patents
5h-index
28Co-inventors
62Inventor score
Filing activity: Mar 31, 2000 → May 31, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6900519B2 | Diffused extrinsic base and method for fabrication | Electricity | 96 | Expired |
| US6600199B2 | Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunity | Electricity | 34 | Expired |
| US6812545B2 | Epitaxial base bipolar transistor with raised extrinsic base | Electricity | 22 | Expired |
| US6426265B1 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Electricity | 14 | Expired |
| US6617220B2 | Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base | Electricity | 8 | Expired |
| US6660664B1 | Structure and method for formation of a blocked silicide resistor | Electricity | 4 | Expired |
| US6869854B2 | Diffused extrinsic base and method for fabrication | Electricity | 3 | Expired |
| US6815802B2 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Electricity | 3 | Expired |
| US9696604B1 | Method for forming a self-aligned Mach-Zehnder interferometer | Physics | 1 | Active |
| US7713829B2 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Electricity | 0 | Active |
| US7173274B2 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Electricity | 0 | Expired |
| US9746744B1 | Method for forming a self-aligned mach-zehnder interferometer | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.