Use of selective ozone teos oxide to create variable thickness layers and spacers
US6617230B2 · kind B2 · utility
7Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2001 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Sep 18, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/911
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for selectively depositing a silicon oxide layer onto silicon substrates of different conductivity types is described. The silicon oxide layer is formed by the ozone decomposition of TEOS at relatively low temperatures and relatively high pressures. Compared to the deposition rate on exposed regions on non-doped silicon, the silicon oxide deposits at a faster rate on exposed regions of P-type silicon and at a slower rate on exposed regions of N-type silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.