Method of processing a semiconductor wafer in a reaction chamber with a rotating component
US6617247B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 27, 2002 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Feb 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A reactor for processing semiconductor wafers and the like is provided. The reactor employs one or more rotating components to more evenly distribute temperature or gases within the chamber. In one embodiment, the reactor is provided with rotating reflectors, which reflect the heat generated from radiant heat lamps onto a stationary wafer in a reaction chamber. The rotation of the reflectors provides for a more uniform temperature distribution on the wafer. In another embodiment, the reaction chamber itself is rotated while the wafer is kept stationary. In another embodiment, a rotating showerhead is provided above the wafer through which gases flow to deposit onto the wafer in a uniform manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.