Method for forming a ruthenium metal layer
US6617248B1 · kind B1 · utility
23Cited by
6References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 10, 2000 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Nov 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a ruthenium metal layer comprises combining a ruthenium precursor with a measured amount of oxygen to form a ruthenium oxide layer. The ruthenium oxide is annealed in the presence of a hydrogen-rich gas to react the oxygen in the ruthenium oxide with hydrogen, which results in a ruthenium metal layer. By varying the oxygen flow rate during the formation of ruthenium oxide, a ruthenium metal layer having various degrees of smooth and rough textures can be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.