Method of plasma etching organic antireflective coating
US6617257B2 · kind B2 · utility
21Cited by
23References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2001 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Jun 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor manufacturing process wherein an organic antireflective coating is etched with an O2-free sulfur containing gas which provides selectivity with respect to an underlying layer and/or minimizes the lateral etch rate of an overlying photoresist to maintain critical dimensions defined by the photoresist. The etchant gas can include SO2 and a carrier gas such as Ar or He and optional additions of other gases such as HBr. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.