Semiconductor device
US6617691B2 · kind B2 · utility
2Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2002 |
| Grant date | Sep 9, 2003 |
| Priority date | — |
| Expiry date | Sep 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The object of the invention is to provide such a highly reliable semiconductor device as no defect such as the breakage of a tungsten conductor occurs. This object is achieved by the following means, i.e., a molybdenum film, a tungsten film and another molybdenum film are deposited in this order on an interlayer dielectric film formed on a silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.