Substrate rinsing and drying method
US6620260B2 · kind B2 · utility
18Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | May 15, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
The wafers W are dipped and rinsed in pure water in the processing bath 60, and then dichloromethane is fed into the processing bath 60, thereby changing the state of the wafer W from being dipped in pure water to being dipped in dichloromethane. Thereafter, the wafers W is raised up to the drying chamber 61, and dichloromethane remained on the surface of each wafer W is evaporated, and the hot N2 gas is discharged onto the wafers W. Thereby, no water marks are produced, and no resist is dissolved, and the substrate can be dried in safety.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.