Photomask, method of lithographically structuring a photoresist layer with the photomask, and method of producing magnetic memory elements

US6620559B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gunther Czech · Radeberg, DE
• Wolfgang Henke · Kempen, DE
• Carsten Fülber · Dresden, DE

Key dates

• Filing date: Sep 28, 2001
• Grant date: Sep 16, 2003
• Expiry date: Sep 28, 2021

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F7/2022
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The photomask and the associated method of lithography and mask technique enable production of a regular configuration of resist dots or holes. At least one photomask is a phase mask. The method is useful for the production of magnetic memory components, in particular MRAM memories, having elliptically shaped magnetic memory elements of high density.