Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6620670B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2002 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Jan 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor processing chamber has been utilized to perform sequential deposition of high-K Al2O3 thin films on a substrate disposed in the chamber employing low viscosity precursors. The method commences with introduction of an aluminum precursor into the processing chamber. In this manner, a monolayer of aluminum precursor is chemisorbed onto the substrate surface. Thereafter, non-chemisorbed aluminum precursor is purged from the processing chamber, followed by introduction of an oxygen precursor. The oxygen precursor reacts with the chemisorbed layer, resulting in a monolayer of Al2O3. Finally, excess oxygen precursor and by-products of the reaction are purged completing the sequential deposition cycle. The sequential deposition cycle can be repeated to grow the Al2O3 film to a desired thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.