Method of fabricating a metal-insulator-metal (MIM) capacitor
US6620701B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 12, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Feb 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a metal-insulator-metal capacitor (MIMCap) (36) including first conductive lines (15), capacitor dielectric (26) and second conductive lines (28), the MIMCap (36) including horizontal capacitive portions (32) and vertical capacitive portions (34). The method includes forming first conductive lines (15) in a first insulating layer (14) of a wafer (10), depositing a second insulating layer (22), depositing a resist, removing portions of the resist, removing exposed portions of the second insulating layer (22) and portions of the first insulating layer (14), removing the remaining resist, and then depositing a capacitor dielectric (26) and second conductive lines (28).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.