Method of forming ohmic contacts using a self doping layer for thin-film transistors
US6620719B1 · kind B1 · utility
47Cited by
6References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2000 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Mar 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
A method for forming ohmic contacts for semiconductor devices, in accordance with the present invention, includes forming a layer containing metal which includes dopants integrally formed therein. The layer containing metal is patterned to form components for a semiconductor device, and a semiconductor layer is deposited for contacting the layer containing metal. The semiconductor device is annealed to outdiffuse dopants from the layer containing metal into the semiconductor layer to form ohmic contacts therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.