John C. Flake
12Patents
6h-index
25Co-inventors
66Inventor score
Filing activity: Mar 31, 2000 → Apr 12, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6495005B1 | Electroplating apparatus | Electricity | 51 | Expired |
| US6620719B1 | Method of forming ohmic contacts using a self doping layer for thin-film transistors | Electricity | 47 | Expired |
| US6838354B2 | Method for forming a passivation layer for air gap formation | Electricity | 11 | Expired |
| US7188630B2 | Method to passivate conductive surfaces during semiconductor processing | Chemistry; Metallurgy | 10 | Expired |
| US6866791B1 | Method of forming patterned nickel and doped nickel films via microcontact printing and uses thereof | Performing Operations; Transporting | 7 | Expired |
| US7001498B2 | Electroplating apparatus and four mask TFT array process with electroplated metal | Electricity | 6 | Expired |
| US7579279B2 | Method to passivate conductive surfaces during semiconductor processing | Chemistry; Metallurgy | 6 | Active |
| US6767828B2 | Method for forming patterns for semiconductor devices | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7387970B2 | Method of using an aqueous solution and composition thereof | Electricity | 2 | Expired |
| US7456105B1 | CMP metal polishing slurry and process with reduced solids concentration | Chemistry; Metallurgy | 1 | Expired |
| US11591699B2 | Electrochemical reactor for upgrading methane and small alkanes to longer alkanes and alkenes | Emerging Cross-Sectional Technologies | 0 | Active |
| US7989347B2 | Process for filling recessed features in a dielectric substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.