Method of forming metal lines having improved uniformity on a substrate

US6620726B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Axel Preusse · Radebeul, DE
• Markus Nopper · Dresden, DE
• Gerd Marxsen · Radebeul, DE

Key dates

• Filing date: Jul 30, 2002
• Grant date: Sep 16, 2003
• Expiry date: Jul 30, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a method of forming damascene metallization lines on a substrate by electroplating and chemical mechanical polishing, the metal layer thickness profile is shaped in correspondence to the removal rate during the chemical mechanical polishing. Thus, any non-uniformity of the chemical mechanical polishing process may be compensated for by appropriately depositing the metal layer so that erosion and dishing of the finally obtained metal lines are within tightly selected manufacturing tolerances.