Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing
US6620736B2 · kind B2 · utility
21Cited by
7References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 24, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Sep 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Deposition of ionized material at a beveled or non-flat edge of a semiconductor wafer and the etching by the ionized material at such edge is controlled in a high density plasma processing machine by surrounding the wafer with a conducting ring to affect sheath potential and deflecting the ions of the material in such a way that the deposition and etching rate changes in a controlled way over the region immediately adjacent the wafer edge. The ring may be biased in several ways to control the ion flux to the wafer edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.