Method for forming a blocking layer
US6620745B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Jan 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming a blocking layer in a multilayer semiconductor device for blocking diffusion of a chemical species including the steps of providing an insulating layer including a target surface for forming a metal nitride layer thereon said insulating layer forming a portion of a multilayer semiconductor device; treating the target surface with an RF generated plasma to cause a density increase over a thickness adjacent to and including a target surface sufficient to reduce a diffusion rate of chemical species therethrough; forming at least one metal nitride layer over the target surface; and, carrying out a photolithographic process wherein the surface of the at least one metal nitride layer is patterned for etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.