CMOS photodiode having reduced dark current and improved light sensitivity and responsivity
US6621064B2 · kind B2 · utility
3Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2001 |
| Grant date | Sep 16, 2003 |
| Priority date | — |
| Expiry date | Oct 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A light-sensing diode having improved efficiency due to an extended junction geometry that provides more than one level of interaction with the light input.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.